This design implements a basic bistable memory element using two cross-coupled NOR gates.
- Set (S=1, R=0): Forces Q=1 aand QB=0.
- Reset (S=0, R=1): Forces Q=0 and QB=1
- Hold (S=0, R=0): Maintains the previous state via feedback.
- Invalid (S=1, R=1): Both outputs go to 0, breaking complementarily and risking metastability when released.
This is a transistor-level CMOS implementation of a 2-input AND gate, built using an analog design flow.
- Topology: Implemeted as a NAND gate followed by an inverter.
- PMOS in parallel (pull-up), NMOS in series (pull-down).
- Output inverter improves signal integrity and drive strength.
- Power & I/O:
- Operates at 1.8V.
- Uses Tiny Tapeout padring for I/O routing and built-in ESD protection.
- Design Choice: Custom layout (no standard cells) allows tighter control over device behavior, improving noise margins and predictability.
- Power the circuit with 1.8V (VDD).
- Set S=0, R=0 → state holds.
- Set S=1, R=0 → Q=1.
- Return S=0 → state remains stored.
- Set S=0, R=1 → Q=0.
- Return R=0 → state remains stored.
- Transient simulation (Xschem/Ngspice)
- Observe Q and QB outputs
- Power the chip with 1.8V (VCC).
- Apply logic inputs (0V or 1.8V) to each input pair
- Monitor the ouput
- Output = HIGH only when both inputs are HIGH
- Otherwise, output = LOW Repeat for all gates using the pin mapping in 'info.yaml'.